Modeling the Effect of Temperature on the Nanotube Field Effect Transistors Using Neural Network
Farid Menacer, Kadri Abdelmalek · International Journal of Hybrid Information Technology · 2016
In this article, we modelled and simulated Carbon Nanotube Field Effect Transistors (CNTFET); this transistor has a carbon nanotube channel.An Artificial Neural Networks (ANN) model was developed to reproduce accurately the behavior of CNTFET to predict its response for a wide range of temperature and voltage with focusing on the experimental data.The neural model is tested and validated; hence the ANN model is able to predict the CNTFET behavior with good accuracy.Finally, the proposed ANN model is integrated as a component in the library of simulation software of PSPICE electronic components.