On Vertically Oriented Charge Trap NAND Flash as 3-D Memory
Andrew J. Walker · 2010
Much has been reported recently on the cost advantages of various 3-D vertically oriented Charge Trap NAND Flash approaches as possible replacements for classic 2-D NAND Flash. What has been missing in the literature are data and discussion on the effects of such stacking approaches on the string currents expected to be sensed. For the first time, this paper shows that the combination of non-crystalline channels and ever-lengthening strings leads to quickly vanishing string currents such that these approaches have limited ability to replace classic 2-D NAND Flash.