AlGaAs/InGaAs/GaAs heterostructures based pHEMT
Nikolay A. Maleev, Aleksei E. Zhukov, A.P. Kovsh, V. M. Ustinov, V.I. Khitko, A. S. Shulenkov · 2002
The results of developing a pHEMT on AlGaAs/InGaAs heterostructures grown on a GaAs substrate are presented. The structures have electron mobility of 6400 cm/sup 2//(V/spl middot/s) and surface electron density of 1.2/spl times/10/sup 12/ cm/sup -2/ at room temperature. Using these structures, transistors with a 0.6-0.8 dB noise factor providing amplification above 11 dB have been developed.