An Experimental 1Mb 0.11um 4.5F2 1.8Volt Multilevel Vertical Split Gate Source Side Injection Test Vehicle for Giga-Bit Density NOR Flash Memory
Hieu V. Tran, Anh Ly, Vishal Sarin, Sang Nguyen, Quoc Hung Nguyen, Loc Hoang, Hyun Kim, Isao Nojima, Dana Lee, Bomy Chen · 2005
An experimental 0.11mum 4.5F21.8V multilevel 1Mb vertical floating gate split gate source side injection (SSI) test vehicle for Giga-bit NOR flash memory is shown for the first time. Novel coupled sense line programming for 25mV precise charge placement and novel low cell current ~10ua mode source follower sense amplifier is shown to enable high speed high density G-bit MLC NOR flash memory system