I DDQ - V DD signaturefor CMOS circuits with bridging defects
Rosa Rodriguez-Montanes, Joan Figueras · Electronics Letters · 1996
IDDQ-VDD signature differences between combinational and sequential CMOS circuits with bridging defects are presented. As VDD increases in combinational circuits with a bridging defect, the IDDQ of the defect subdomain increases monotonically as expected, and the rest of the circuit presents one or more local IDDQ maximums. In sequential circuits with bridging defects connecting control loop nodes the VDD-IDDQ signature presents intervals of a constant non-defective IDDQ value.