High-density (4.4F/sup 2/) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering
F. Arai, N. Arai, Shin-ichi SATOH, Toshitake Yaegashi, Eiji Kamiya, Yasuhiko Matsunaga, Yoshinori Takeuchi, H. Kamata, A. Shimizu, N. Ohtami, N. Kai, S. Takahashi, W. Moriyama, Kouichi Kugimiya, S. Miyazaki, T. Hirose, H. Meguro, K. Hatakeyama, K. Shimizu, R. Shirota · 2002
This paper describes a novel high-density 4.4F/sup 2/ (F: feature size) NAND flash memory with the cell size of 0.074 um/sup 2/ for 0.13 um design rule. To minimize the cell size, two key technologies are introduced as follows. (1) The Super-Shallow Channel Profile (SSCP) engineering and (2) a novel layout of the NAND string that consists of 32 cells. The NAND cells fabricated by the above technologies have demonstrated good cell characteristics. This 4.4F/sup 2/ NAND flash technology is highly advantageous for low cost flash memories of 4 Gbit and beyond for mass storage applications.