90-nm-node multi-level AG-AND type flash memory with cell size of true 2 F/sup 2//bit and programming throughput of 10 MB/s
Y. Sasago, Hiroki Kurata, T. Arigane, Kazuo Otsuga, Takashi Kobayashi, Yoshinori IKEDA, Tomoteru Fukumura, Shunsuke Narumi, Akira Sato, Tatsuo Terauchi, M. Shimizu, S. Noda, K. Kozakai, Osamu Tsuchiya, K. Furusawa · 2004
The first true 2-F/sup 2//bit flash cell with a programming throughput of 10 MB/s was developed. In this cell, diffusion-layer local bit lines of an assist-gate AND-type flash are replaced by inversion-layer ones under assist gates. The bit-line pitch is thus reduced to 2 F. A drain-disturbance-free and soft-write-free flash cell was produced by means of a new diffusion-layer-less technology. Source-side injection programming is applicable to the new flash cell; therefore, the cell programming time is reduced to 1 /spl mu/s. The smallest memory cell (0.0162 /spl mu/m/sup 2//bit) achieved to date was accomplished by using a 90-nm technology node and applying multi-level cell technology.