A 9.6 Gb/s HEMT ATM switch LSI for B-ISDN
Yuu Watanabe, Yasuhiro Nakasha, Y. Kato, K. Odani, Masayuki Abe · 2003
An asynchronous transfer mode (ATM) switch LSI has been designed for the broadband integrated services digital network (B-ISDN) and fabricated using 0.6- mu m high-electron-mobility transistor (HEMT) technology. To enhance the high-speed performance of direct coupled FET logic (DCFL), event control logic was used for the first-in first-out (FIFO) buffer circuit, instead of conventional static memory. The 4.8-mm*4.7-mm chip contains 7100 DCFL gates. The maximum operation frequency was 1.2 GHz at room temperature with a power dissipation of 3.7 W. The single-chip throughput was 9.6 Gb/s.>