Realizing erase-free SLC flash memory with rewritable programming design
Yu-Ming Chang, Yung-Chun Li, Ping-Hsien Lin, Hsiang-Pang Li, Yuan-Hao Chang · 2016
Over the past years, the adaptation of flash memory has seen a tremendous growth in a wide range of fields, with high-end applications demanding ever higher reliability and performance for storage devices. Even though a single-level-cell (SLC) flash memory can have a higher endurance and a lower access latency to better meet that requirement in comparison with a multi-level-cell (MLC) one, the rapid deterioration of reliability due to advanced shrinking technology means that a flash block can only survive over a smaller and smaller number of erase cycles. This work proposes an erase-free scheme, which comprises the design of rewritable programming and software management, to enable a rewritable usage model that can reuse flash blocks several times without using erase operations in an SLC flash memory based storage system. The evaluation results show that the proposed scheme achieves 6--time rewritable capability such that 83% erase operations can be removed; in the best settings, the write latency can be reduced by 3.67x on average under various workloads.