Versatile TLC NAND flash memory control to reduce read disturb errors by 85% and extend read cycles by 6.7-times of Read-Hot and Cold data for cloud data centers
Atsuro Kobayashi, Tsukasa Tokutomi, Ken Takeuchi · 2016
Versatile Triple-Level-Cell (TLC) NAND flash memory control with Read Hot/Cold Migration, Read Voltage Control and Edge Word Line Protection is proposed for data center application SSDs. Measured errors decrease by 85% and measured acceptable read cycles increase by 6.7-times.