90nm Node 1T Floating Gate Embedded Flash Memory with Precharge NMOS Transistor
Padma Prasada, Sathisha, H. D. Ranjith · 2016
In recent technology advances, Flash Memory has become a powerful and cost -- effective solid state storage technology predominantly used in mobile electronics devices. Flash memory is developed on two architectures NAND and NOR. The proposed methodology is developed on 1T-Flash NOR cell to reduce area and obtain high performance even at 90nm logic process technology. NOR offers low read latencies features; make it suitable choice for direct code execution. The proposed method design of single poly silicon Flash memory designed and developed 4×4 flash memory architecture and pre-charge transistors to boost the flash cell architecture to operate at low voltage 1.2V to 5V for the program (write), erase and read operation. The advantage of pre-charge is that it gives start up voltage to flash memory. The proposed method is developed using Tanner and Micro wind 3.1 version.