Highly Integrated 3-dimensional NOR Flash Array with Vertical 4-bit SONOS (V4SONOS)
Yoon Hee Kim, Jang-Gn Yun, Seong-Jae Cho, Byung‐Gook Park · Journal of the Institute of Electronics Engineers of Korea · 2010
We proposed a highly integrated 3-dimensional NOR Flash memory array by using vertical 4-bit SONOS NOR flash memory. This structure has a vertical channel, so it is possible to have a long enough channel without extra cell area. Therefore, we can avoid second-bit effect, short channel effect, and redistribution of injected charges. And the proposed array structure is based on three-dimensional integration. Thus, we can obtain a NOR flash memory having /bit cell size.