A sub-1V PTAT voltage reference based on the bulk-driven technique
Yang Yin-tang · Journal of Xidian University · 2005
The fundamental principles of the bulk-driven MOSFET are discussed, with the analysis and simulation of its low voltage characteristics also made. Based on the PMOS bulk-driven and current feedback technique an sub 1V low power PTAT voltage reference is proposed. At a (0.8V) power supply with 0~100℃ temperature range, the temperature coefficient of the voltage reference is (0.926mV/K), and the supply current is about (4.5μA). When the power supply ranges between 0.7~(1.0V), the voltage reference is about (302mV) at the room temperature.