Cell to Cell Interference Cancellation Algorithms in Multi level cell Flash memeory
Myeongwoon Jeon, Kyung-Chul Kim, Beomju Shin, Jungwoo Lee · Journal of the Institute of Electronics Engineers of Korea · 2010
NAND multilevel cell (MLC) flash memory is widely issued because it can increase the capability of storage by storing two or more bits to a single cell. However if a number of levels in a cell increases, some physical features like cell to cell interference result cell voltage shift and it is known that a VT shift is unidirectional. To reduce errors by the effects, we can consider error correcting codes(ECC) or signal processing methods. We focus signal processing methods for the cell to cell interference voltage shift effects and propose the algorithms which reduce the effects of the voltage shift by estimating it and making level read voltages be adaptive. These new algorithms can be applied with ECC at the same time, therefore these algorithms are efficient for MLC error correcting ability. We show the bit error rate simulation results of the algorithms and compare the performance of the algorithms.