The choice of active device about lower-noise preamplifier
Zhao Shun-pingb · Electrical Measurement & Instrumentation · 2007
According to noise theory and equivalent noise model,deduced noise characteristic indexes.In order to get the optimal noisy matching,analyzed and compared inside resistance and noise characteristics of bipolar junction transistor(BJT)、integrated operation amplifier and junction field-effect transistor(FET)and the characteristics of three coupled modes.Consequently educed single or Multi-Parallel-transistors is a ideal active device of the preamplifier for the signal source with low resistance.