Design of a Thermal-shutdown Circuit Using 0.6 μm CMOS Technology
Zhu Dazhong · Research & Progress of SSE Solid State Electronics · 2008
A thermal-shutdown circuit is designed and fabricated using 0.6μm standard CMOS process from CSMC.It is composed of PTAT module,reference module and comparator module.PTAT output voltage is defined as proportional to the thermodynamic temperature.Experimental results yield an output PTAT voltage sensitivity 10 mV/℃ and good linearity(maximum dispersancy is 1.6%) over the range of 30～130℃.Shutdown temperature can be set by an exterior resistor and under 85℃ the gap between simulation and experimental result is less than 5℃ while up to 10℃ over 85℃.Simple structure,low dispassion and small chip area make it excellent.It is easy to transplant and can be applied to many fields such as LED illuminance drive and power supply management circuits.It also constitutes power device modules with self thermal-shutdown when packged with MOS power devices.