Electron transport properties of carbon nanotube field effect transistor based on quantum model
Xiaoyan Wang · Electronic Components and Materials · 2015
Using quantum transport model and NEGF theory, self consistent solving Schrodinger equation and Poisson equation, the model of the electronic transport characteristics of the class MOS-carbon nanotube field effect transistor were built. When the channel length Lg is 5–25 nm, the impact on the device's conduction current, threshold voltage, off leakage current, current switching ratio, and sub threshold amplitude were examined. The results show that: when the Lg is greater than or equal to 15 nm, MOS-CNTFET has no quantum size effect; when the Lg is less than 15 nm, the device appears short channel effect; when the Lg is less than 10 nm, short channel effect is more obvious.