Ultra-low Voltage CMOS Bandgap Voltage Reference Based on Bulk-driven Technique
Baojun Zhang · Research & Progress of SSE Solid State Electronics · 2006
Based on bulk-driven and resistive subdivision techniques, an ultra-low voltage CMOS bandgap reference using second-order temperature and current feedback techniques is realized. The bulk-driven op amp is applied as the negative feedback of the reference. Its output is used to bias its current sources, leading to a higher power supply rejection ratio (PSRR), that is -63.8 dB. The bandgap reference is simulated by Hspice simulator. Under a 0.9 V supply, the output voltage of the reference is 572.45 mV, and its temperature coefficient is 13.3 ppm/°C. The variation of the output with supply voltage range of 0.8～1.4 V is 3.5 mV. Based on TSMC 0.25 μm 2P5M CMOS process, the die area of the proposed bulk-driven bandgap voltage is 203 μm×478.1 μm.