A Device Model of Photoelectric Dual Base Transistor
Sheng Zhang · Dianzi xuebao · 2003
By adopting the approximate and simplified mathematical expressions and the relative equivalent circuit for the first time in consideration of the low injection effect,the high injection effect and the early effect etc.of the transistor,the mechanism for the origin of the negative resistance in photoelectric dual base transistor (PDUBAT) has been described.The theoretical calculation is well consistent with experimental results in the negative resistance region and the valley region.