Design and Simulation of a Bandgap Reference Circuit
Longye Wang · Electronic Science and Technology · 2011
By using 0.18 μm complementary metal oxide semiconductor(CMOS) model,a bandgap reference circuit is designed.The circuit is simulated by Hspice.When operating at a 5 V power supply with the temperature range from-25 to 80 ℃,the device has a temperature coefficient of 9.14×10-6 ℃.It outputs a voltage of 1 250±43 mV at room temperature,when the power supply varies from 3 V to 5 V.