Design of a CMOS Receiver Front-End for Bluetooth
Xu Liang · 2006
A fully integrated low-IF receiver front-end for bluetooth is designed based on TSMC′s 0.25 μm CMOS process.The front-end consists of an inductive source degeneration differential low noise amplifier and an active doubly balanced Gilbert mixer.With 2.5 V supply voltage,the front-end is simulated to achieve a gain of 22.5 dB,a noise figure of 6.3 dB,and an input third-order intercept point of-15.3 dBm.The circuit dissipates 38.4 mW of power.