Correlation Integral Analysis of 1/f Noise in MOSFET's
Lei Du · 2005
The correlation integral method is used to analyze 1/f noise in MOSFET's.It is found that the device noise is similar to 1/f noise from RTS superposition model.Through the discussion and analysis of the physical noise model of MOSFET's,the conclusion that the number fluctuation is dominant in n-MOS device and the mobility fluctuation is dominant in p-MOSFET is validated.It has been shown that this approach can be used to distinguish the types of the noise model for electronic devices.