Optimized Design of a Broadband Power Amplifier Based on Impedance Measurement of FET
Naichang Yuan · Journal of Microwaves · 2007
A broadband linear high power amplifier was designed,which operated through the band from 800MHz to 1250MHz.A simple load-pull method was used to acquire the input and output impedance parameters of the LDMOS FET in the band.Based on the impedance parameters,the matching networks of the amplifier were designed and optimized.Measured results give the P1dB output power over 44.5 dBm,the 2nd harmonic below-25dBc,and the IM3 better than-44dBc with 2-tone test at 38.5dBm output power.