Few-electron Transport Characteristics and Applicationsof Nanoelectronic Devices
Jiezhi Chen · Research & Progress of SSE Solid State Electronics · 2006
Basic transport theory of nanoelectronic devices is firstly introduced, and then device models based on quantum-dot structure are analyzed. Discrete quantum levels and electron-filling states in quantum dots are discussed under different conditions, including the influence of electron-spin effects. Meanwhile, special emphasis is focused on the characteristics of coupling between localized electrons and delocalized electrons in nanometer confined system. Finaly, we summarize the research achievements and applications of nanoelectronic devices.