Hyperbola Model of I _D- V _G Characteristics of Ferroelectric Field-effect-transistors with Ag/Bi_4Ti_3O_ 12 Gate
Ren Min-fang · 2005
A hyperbola model of I _D- V _Gcharacteristics of ferroelectric field-effect-transistors(FFETs) with Ag/Bi_4Ti_3O_ 12gate was brought forward,which is based on the theory of MOS device and the experimental data of the FFET.The model comprises the main parameters such as threshold voltage and the ferroelectric polarization properties.The simulated I _D- V _G curves were consistent with the curves obtained by measurement,which indicated that the model could characterize the I _D- V _G properties of the ferroelectric field-effect-transistors properly.