Design of an Improved BiCMOS Bandgap Reference with High Precision
Sanqing Liu · Microelectronics & Computer · 2007
Based on the analysis of error factors in conventional bandgap reference circuit,an improved bandgap core structure,which is more immune to errors caused by current offset,is introduced in the paper.The simulation results indicate a 1.22V bandgap reference with temperature coefficient of only 3.1×10-6/℃ from-25℃ to 125℃ and a power supply rejection ratio(PSRR) of 76dB is achieved.The measured total current consumption is 6.9μA and the line regulation is 0.142mV/V at 25℃.