Design and Simulation 4GHz Microwave Low Noise Amplifier
Meng Zhao · 2009
This paper introduce a method to design microwave amplifier based on GaAs MESFET.Combine the theory of microwave circuit with ADS2006,the circuit are well simulated and optimized and absolutely steady in full frequency field.The Gain is larger than 15dB and the Noise Figure is less than 1.5dB,which satisfy the requirement of design.Design the layout and co-simulate it and compare its result with schematic 's.This amplifier can be used widely in wireless communication system.