Design of low temperature drift bandgap voltage reference and driving circuit
Lan Jia-long · International Electronic Elements · 2005
The kind of bandgap voltage reference and driving circuit based on standard N-well CMOS process is given. The circuit is verified with 0.6μm CSMC-HJ N-well CMOS process. HSPICE simulation results show that the output voltage is around 1.25V, and that the temperature coefficient is only 7×10-6/℃ in the temperature range from -55℃ to 125℃ under the typical process parameters; the power supply is range from 4V~6V. The circuit produces about 1.25V reference voltage output and 1mA~2mA driving current at the same time.