Recent progress and future directions in NAND Flash scaling
Akira Goda · 2013
This paper discusses challenges and opportunities of NAND cell scaling. The conventional wrap floating gate (FG) cell has many scaling challenges including high aspect ratio, cell-to-cell interference and increase in E-field. Various planar cell technologies have been suggested. Among them, a planar FG cell has demonstrated the best performance and reliability at the middle 10 nm node. Key requirements for the 3D NAND as a 10 nm equivalent NAND have been discussed.