Complementary bipolar application specific analog semicustom array, intended to implement front-end units
Kondratenko, S, V.I. Ilyushchenko, Maslennikov, V, Yu. N. Mishin, Yu. A. Volkov, Meshcheriakov, V, E. Atkin · CERN Document Server (European Organization for Nuclear Research) · 2002
The structure of an analog semicustom array, intended to implement front-end electronics ICs on its basis, is considered. The features of this array are: implementation with an inexpensive bipolar process despite containing an equal number of NPN and PNP structures with well matched characteristics, supply voltages from 1.5 V to 15 V, transistor current gains Bst~100 and unity gain frequencies Ft > 3 GHz at collector currents of (100...300) mu A, high- and low-ohmic resistors, MOS capacitors, minimum two variable plating levels available. Specific circuit diagrams and parameters of the front-end electronics ICs, created on the basis of the considered array, are presented. The results of their tests are given. (4 refs).