Hybrid Drowsy SRAM and STT-RAM Buffer Designs for Dark-Silicon-Aware NoC
Jia Zhan, Jin Long Ouyang, Fen Ge, Jishen Zhao, Yuan Xie · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2016
The breakdown of Dennard scaling prevents us from powering all transistors simultaneously, leaving a large fraction of dark silicon. This crisis has led to innovative work on power-efficient core and memory architecture designs. However, the research for addressing dark silicon challenges with network-on-chip (NoC), which is a major contributor to the total chip power consumption, is largely unexplored. In this paper, we comprehensively examine the network power consumers and the drawbacks of the conventional power-gating techniques. To overcome the dark silicon issue from the NoC's perspective, we propose DimNoC, a dim silicon scheme, which leverages recent drowsy SRAM design and spin-transfer torque RAM (STT-RAM) technology to replace pure SRAM-based NoC buffers. In particular, we propose two novel hybrid buffer architectures: 1) a hierarchical buffer architecture, which divides the input buffers into a set of levels with different power states and 2) a banked buffer architecture, which organizes the drowsy SRAM and the STT-RAM in different banks, and accesses them in an interleaved fashion to hide the long write latency of STT-RAM. In addition, our hybrid buffer design enables NoC data retention mechanism by storing packets in drowsy SRAM and nonvolatile STT-RAM in a lossless manner. Combined with flow control schemes, the NoC data retention mechanism can improve network performance and power simultaneously. Our experiments over real workloads show that DimNoC can achieve 30.9% network energy saving, 20.3% energy-delay product reduction, and 7.6% router area reduction compared with pure SRAM-based NoC design.