Semiconductor qubits based on fluorine implanted ZnMgSe/ZnSe quantum-well nanostructures
Y. M. Kim, Darin J. Sleiter, Kaoru Sanaka, Y. Yamamoto, Jan Meijer, K. Lischka, A. Pawlis · Physical Review B · 2012
It has been shown that the excitons bound to individual donors in epitaxially grown ZnMgSe/ZnSe quantum-well (QW) nanostructures provide suitable single-photon sources and optically controllable qubits for quantum information technology. Here we demonstrate ion implantation as an alternative fluorine doping method for ZnMgSe/ZnSe QWs. Photoluminescence measurements of F-implanted ZnSe QWs show the correlation between the number of sharp recombination peaks of F-donor bound excitons and the implantation dose as well as the saturation of the luminescence intensity related to a donor. The magnetospectroscopy results confirm the presence of two doubly connected $\ensuremath{\Lambda}$ systems in the same way as for epitaxially grown and F-doped ZnSe QWs. If special techniques such as selective implantation through a mask and registration of single-ion impacts are applied on micro- and nanocavities, the ion implantation can be an attractive alternative fluorine doping method for quantum information technology based on fluorine impurities in ZnSe.