Determination of Rate of Change of Current Inside the 3 Ghz Silicon Chip for Any Given Noise at 100amp Maximum Saturation Current
Bidyut Kumar Bhattacharyya, Nivedita Laskar, Suman Debnath, Sikha Bhattacharya · International Journal of Electrical Energy · 2013
In this paper we will describe a method to determine how to ramp the current linearly inside a silicon chip with respect to every clock period, till it reaches its saturation current. We have assumed a set of transistors switching continuously at a very small time interval κ to have a small saturation current in a time frame much less than one clock period. We continued this process on every clock period with an assumption that more saturation current is drawn by a having more transistors switching during the second clock cycle. This process continues for N number of times for the system to reach the maximum saturation current. We have generated the final current ramp linear in time.