Artificial Neural Network Modeling Technique for FET
Jianjun Gao · Institution of Engineering and Technology eBooks · 2010
Accurate small-signal and large-signal equivalent-circuit models of microwave active devices (e.g., diodes, FETs and HBTs) are very useful for device performance analysis (e.g., noise, gain) in designing microwave circuits and characterizing the device technological process. Nonlinear models of microwave devices are commonly in terms of state functions such as closed-form equations, Volterra series, or look-up tables. These quantities are classically determined via a small signal detour based on multi-bias S-parameters and DC measurements. The linear equivalent-circuit model is generally more accurate than a linearized nonlinear model for predicting the S-parameters.