DIEDESIGNOFATRANSMITTINGTRANSISTORIN A 175MHz POWER AMPLIFIERAT28V
Prakash Rajah, Razali binIsmail, Avinash Rajah · 2004
Thispaperpresents thediedesign ofa NPN transistor, whichistargeted for operation inapoweramplifier. Theproposed dieisdesigned using epitaxial planar bipolar junction technology. Thetransistor dieis designed foroperation in the175MHz frequency rangewitha 28Vbiasing. Itis capable ofproducing a maximumoutput powerof4W.Itcanbeutilized inClass A, Class BorClass C poweramplifiers meantfor transmission purposes suchas inmobile communication, industrial communication or military transmitters. Thepoweramplifier is typically placed before the antennain transmitter systems. Itisbesttocouple the design inatwo-stage amplifier toproduce a significantly higher-powered signalfor transmission.