Generation current temperature scaling
A. Chilingarov · CERN Document Server (European Organization for Nuclear Research) · 2011
The document consists of two RD50 Technical Notes devoted to the temperature scaling of the current generated in Si bulk. The first one (of 9.5.2011) describes the basics of the phenomenon following from the semiconductor physics and recommends the I(T) parameterisation. The second one (of 12.7.2012) reviews the experimental data on I(T) scaling in irradiated Si sensors available in literature and obtained in Lancaster University. Both sets of results support the conclusions made in the first Note.