SOMEASPECTSON THETHEORYOF TRANSIENTRADIATIONINDUCEDDIFFUSION
Currentsinsemiconductor Diodes, B. Sigfridsson · 1967
Analyticalexpressions fortheshapeof the diffusioncomponent of thecurrentpulsesfrom a reversebiasedsemiconductor diodeirradiated by shortburstsofx-raysare derived,takinginto accountthephysical dimensions andtheeffect of backdiffusionof chargecarriersintothebulk regionsfromthedepletion zone. By themodel usedit seemsto bepossible toexplaintheexperinmentally observedvariationsofboththeamplitudeandthedecayof thediffusion component with thereversevoltage.