Experimental StudyofChargeDisplacement inNitride Layer anditsEffect onThreshold Voltage Instability ofAdvanced Flash MemoryDevices
Guoqiao Tao, Cedric Ouvrard, Helene Chauveau · 2007
significant change ofthreshold voltage inthelong termcan Theeffect ofcharge displacement innitride layer ofONO beexpected. Whenthedevice isbiased appropriately, this stack inscaled flash cells areexperimentally studied by threshold voltage shift canbeobserved inshort term. using gatestress measurements. Theredistribution of charge isfoundtofollow Poole-Frenkel conductionInthis paper, wereport ourstudy oftheeffect ofcharge remechanisms. However, themeasurements on scaled distribution inthenitride layer offurther scaled flash devices showsignificant randomtelegraph noise. The devices. Experiments arecarried outondevices inamultinoise willbeevenmorepronounced infuture scaled purpose 2T-FNFNNOR embedded Flashtechnology in devices. 90nmnode[10]. Anddiscussions arecarried outfor65nm devices. Veryinterestingly, thiseffect willbecomeless