Reliable MLC NAND flash memories based on nonlinear t-error-correcting codes
Zhen Wang, Mark G. Karpovsky, Ajay M. Joshi · 2010
Multi-level cell (MLC) NAND flash memories are very popular storage media because of their power efficiency and big storage density. This paper proposes to use nonlinear t-error-correcting codes to replace linear BCH codes for error detection and correction in MLC NAND flash memories. Compared to linear BCH codes with the same bit-error correcting capability t, the proposed codes have less errors miscorrected by all codewords and nearly no undetectable errors. For example, the proposed (8281, 8201, 11) 5-error-correcting code has no errors of multiplicity six miscorrected by all codewords while the widely used (8262, 8192, 11) linear shortened BCH code has 11 over 6 × A11errors in this class, where A11≈ 1014is the number of codewords of Hamming weight eleven in the shortened BCH code. Moreover, in spite of the fact that the Hamming distance of the proposed code is 2t+1, it can also correct some errors of multiplicity t+1 and t+2 requiring no extra hardware overhead and latency penalty. In this paper, the constructions and the error correction algorithm for the nonlinear t-error-correcting codes are presented. The architecture of the encoder and the decoder for the codes are shown. The error correcting capabilities, the hardware overhead, the latency and the power consumption for the encoder and the decoder will be analyzed and compared to that of the linear BCH codes to demonstrate the advantages of the proposed codes for error detection and correction in MLC NAND flash memories.