A Novel Flash Memory Device With S Plit Gate Source Side Injection And 0N0 Charge Storage Stack (SPIN)
Wei-ming Chen, Swift, Roberts, Forbes, Higman, Maiti, Paulson, Kuo‐Tung Chang · Symposium on VLSI Technology · 1997
This paper discusses a novel flash memory featuring a selfaligned split gate structure with sub-0.lpm sidewall gate length, source side injection for programming, band-to-band tunneling for erasing, and an oxide/nitride/oxide (ONO) stack for charge storage. The bitcell is suitable for low voltage (1.8V) and high density (cell size 1.35 km2 using 0.4 Fm technology) applications.