Research on a New Real-Time Bad Block Replacement Algorithm
Qinglin Qiu, Weigong Zhang, Jinye Rong, Jian Wang · 2009
The characters of FLASH memory are low-power, long-lived, deep storage density, adapted to strict environment, nonvolatile and the price is decreased, because of these reasons, it is wildly used. However, there are some inherent particularities: low writing speed, bad blocks exist when produced and could generated with using and so on. A new bad block management algorithm is proposed in this paper based on the application of NAND FLASH, and it improved the efficiency and ensured the data continuity.