High speed GaAs 32×8 embeddable dual port SRAM register array for 200 Mbyte/s packet switching applications
K.S. Lowe · Electronics Letters · 1990
A 3ns, 130 mW, 32×8 dual port SRAM register array targetted for embedded use as the data frame storage unit of a time division multiplexed switch chip has been successfully fabricated in a GaAs E/D MESFET process. It represents the first known report of a circuit with simultaneous read/write capability in this technology.