Three-Dimensional NAND Flash Memory Based on Single-Crystalline Channel Stacked Array
Yoon Kim, Myounggon Kang, Se Hwan Park, Byung‐Gook Park · IEEE Electron Device Letters · 2013
This letter describes 3-D NAND flash memory architecture having four-level stacked single-crystalline silicon nanowire channels. Previously, we designed 3-D NAND flash memory architecture based on single-crystalline channel stacked array (CSTAR). In this letter, CSTAR NAND flash memory is fabricated and its operations are verified. Successful memory operations of each stacked array of CSTAR including program/erase, retention, and endurance performances are demonstrated.