A 1 Gb multilevel AG-AND-type flash memory with 10 MB/s programming throughput for mass storage application
Kenichi Yoshida, Osamu Tsuchiya, Yoshihide YAMAGUCHI, Jiro Kishimoto, Yoshinori IKEDA, Shunsuke Narumi, Y. Takase, K. Furusawa, K. Izawa, Tsuyoshi Yoshitake, Takashi Kobayashi, H. Kurata, M. Kanemitsu · 2003
A 1 Gb multilevel flash memory is fabricated in a 0.13 /spl mu/m CMOS process. The chip area of 95 mm/sup 2/ is achieved using AG-AND-type cells with a multilevel program cell technique and compact write-buffer. By use of constant-charge-injection programming and multi-bank operation, high-speed programming throughput of 10 MB/s achieved.