Heavy ion SEE studies on 4-Gbit NAND-Flash memories
H. Schmidt, Dietmar Walter, M. Brüggemann, F. Gliem, R. Harboe-Sørensen, Ari Virtanen · 2007
Heavy ion SEE studies on three 4-Gbit NAND-flash memory types were performed at the RADEF facility at the University of Jyvaskyla, Finland with particular emphasis on SEFI differentiation. An error classification for complex memory devices is introduced, and respective cross sections are reported.