Simulation based analysis of temperature effect on the faulty behavior of embedded DRAMs
Zaid Al-Ars, A.J. van de Goor, J. Braun, D. Richter · 2002
Temperature has proven to be an effective stress condition, commonly used to stress memory devices and to detect special types of failure mechanisms. In this paper a new approach is presented where temperature is used as a test parameter to increase the fault coverage of specific tests. This is done using defect injection and simulation of a memory model at different temperatures. The analysis presents new types of detection conditions for memories and evaluates the impact of temperature on these conditions.