Detailed physical simulation of program disturb mechanisms in Sub-50 nm NAND flash memory strings
Chi Dong Nguyen, Angelika Kuligk, Mikhail I. Vexler, Markus Klawitter, V. Beyer, Thomas Melde, M. Czernohorsky, BERND MEINERZHAGEN · 2010
The hot electron induced mechanism disturbing the stored information in inhibited bit lines during the programming of nonvolatile memories with NAND architecture is studied in detail using a new dedicated advanced physical simulation scheme for the first time.