Inherent Issues and Challenges of Program Disturbance of 3D NAND Flash Cell
Keonsoo Shim, Eun-Seok Choi, Sung-Wook Jung, Sehoon Kim, Hyunseung Yoo, Kwang-Sun Jeon, Han-Soo Joo, Jung-Seok Oh, Yoon‐Soo Jang, K.T. Park, Sangmoo Choi, Sang-Bum Lee, Jeong-Deog Koh, Ki-Hong Lee, Juyeab Lee, Sang‐Hyun Oh, Seung-Ho Pyi, Gyu-Seog Cho, Sung-Kye Park, Jinwoong Kim · 2012
Program disturbance characteristics of 3D vertical NAND Flash cell array architecture have been investigated intensively. A new 'program Y disturbance' mode peculiar to 3D NAND Flash cell is defined. Swing characteristics of poly-Si channel and increased NOP (number of program) stress have been compared with 2D planar NAND Flash cell. In this paper, new program method pertinent to 3D NAND Flash memory was proposed to obtain program disturbance characteristics for MLC.