Battery Operated 16m Dram With Post Package Programmable And Variable Self Refresh
Do-Chan Choi, Young-Rae Kim, Gi-Won Cha, Jae-Hyeong Lee, Sang-Bo Lee, Keum-Yong Kim, Ejaz Ul Haq, Dong-Soo Jun, Kyupil Lee, Soo-In Cho, Jong-Woo Park, Hyung‐Kyu Lim · 2005
with wide operating voltage range of 1.8~ to 3.6~ for battery based portable applications. Low power during data retention is obtained with Vcc and temperature variable self refresh which is programmable after packaging using electrical fuses. High performance is achieved at low voltage with dual VPPs for well bias and on-chip high voltage power supply, dual threshold voltages for NMOS and voltage variable sensing control. The 16M has a measured RAS access time of 58ns at 1.8~ and 83°C. This paper describes a I6M DRAM