Large-signal response of high speed p-i-n photodetectors to short pulses with small spot sizes
Hilmi Volkan Demir, Micah B. Yairi, Petar B. Atanackovic, D.B. Miller · 2003
Summary form only given. We simulated the behavior of a feasible photodetector: a 25 x 25 /spl mu/m p-i-n diode. To determine the spatio-temporal behavior, we monitored the voltage change across the photodiode in response to the incident pulse. For that, we used a dual-diode structure that was comprised of a p-i-n photodiode with a bulk intrinsic region integrated with a p-i(MQW)-n reflective electrooptical modulator diode on the bottom.